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Laser bars and chips

MOCVD, a vapor-phase epitaxy, is based on delivery of initial components of epitaxial layers in form of highly volatile elementary substances or compounds via a carrier gas flow into a growth zone. These materials induced thermally or else decompose in the reactor and interact chemically, while desired components deposit on a substrate which serves as a basis of a semiconductor device.

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Description

ASTRUM LT offers CONTRACT R&D:

CUSTOM MOCVD EPITAXY

CUSTOM LASER DIODE BARS

Custom wavelength
CW or QCW, up to 200W

MOCVD technology offers a number of advantages:

Exceptionally high quality of layers: higher growth rate at high doping uniformity and consistency.
High yield: no need for ultra-high vacuum allows for better up-time.
Flexibility: growth of various materials and during the same process run.
Growth of multi quantum wells structures (MQW structures).

CUSTOM LASER DIODE BARS

Custom wavelength
CW or QCW, up to 200W

MOCVD CAPABILITIES

AlGaInP/GaAs LED, lasers 635 – 780nm automotive industry, street lights, DVD, displays
AlGaAs/GaAs lasers 780 – 1060nm CD, telecommunication, high power lasers
AlInAs/GaInAs/InP LED, lasers 1300 – 1600nm IR - diodes, high power optical modules

MOCVD CAPACITIES

AIXTRON with configurations of 2", 3", or 4” wafers
Doping concentration from 1E13cm-3 to 1E20cm-3

IN-HOUSE MOCVD CHARACTERIZATION

Surface defects mapping
X-ray diffraction
ECV profiling
Wafer photoluminescence (PL) mapping
Scanning Electron Microscopy (SEM)